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Abstract：
We have fabricated the X-ray detector based on the alpha- Zn2SiO4 film. The Zn2SiO4 film was prepared by the solid state reaction of ZnO film and quartz substrate at 1200 degrees C. The fabricated detector has a rapid and steady response to X-ray irradiation and shows a light-to-dark-current ratio more than 10(3) under the applied bias of 30 similar to 200V (dose rate 0.415 Gy/s). The response current increases sublinearly with the X-ray intensity which can be attributed to trap centers in the film. It is indicated that Zn2SiO4 can be a candidate material for the development of compound semiconductor X-ray detector. (C) 2015 Elsevier B.V. All rights reserved.
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SENSORS AND ACTUATORS A-PHYSICAL
ISSN： 0924-4247
Year： 2015
Volume： 236
Page： 98-103
2 . 2 0 1
JCR@2015
3 . 4 0 7
JCR@2020
ESI Discipline： ENGINEERING;
ESI HC Threshold：138
JCR Journal Grade：2
CAS Journal Grade：3
Cited Count：
WoS CC Cited Count： 7
SCOPUS Cited Count： 9
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 4
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