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Abstract：
In this paper, a novel analytical physical model for thin film SOI RESURF structure is developed, which is based on 2-D Poisson equation, and firstly considers the influence of the field SiO2 interface charge. Thin film SOI RESURF structure is analyzed using this novel model. There are two electric field peak values at the interfaces of the p+n and n+n junctions. The potential distribution is similar to a step between the p+n and n+n junctions. The field SiO2 interface charge makes the electric field increase at the interface of the p+n junction, and reduces the electric field at the interface of the n+n junction. The analytical results agree with the simulations of MEDICI.
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International Conference on Solid-State and Integrated Circuit Technology Proceedings
Year： 1998
Page： 724-727
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WoS CC Cited Count： 0
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ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 2
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