Ideas　for　using　the　boundary　element　method　(BEM)　with　the　concept　of　critical　electric　field　for　simulation　of　high-voltage　junction　termination　are　introduced.　Approaches　for　dealing　with　interface　charges,　depleted　regions,　and　metal　field　plates　are　presented.　Rules　used　to　develop　and　apply　the　BEM　program　are　given.　Simulation　of　one　silicon-on-insulator　diode　is　performed　and　the　results　are　compared　with　those　obtained　using　the　finite　difference　method.