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Abstract:
Ultrahigh energy storage density of 52.4 J cm(-3) with optimistic efficiency of 72.3% is achieved by interface engineering of epitaxial lead-free oxide multi-layers at room temperature. Moreover, the excellent thermal stability of the performances provides solid basis for widespread applications of the thin film systems in modern electronic and power modules in harsh working environments.
Reprint Author's Address:
Source :
ADVANCED MATERIALS
ISSN: 0935-9648
Year: 2017
Issue: 5
Volume: 29
2 1 . 9 5
JCR@2017
3 0 . 8 4 9
JCR@2020
ESI Discipline: MATERIALS SCIENCE;
ESI HC Threshold:217
JCR Journal Grade:1
CAS Journal Grade:1
Cited Count:
WoS CC Cited Count: 191
SCOPUS Cited Count: 63
ESI Highly Cited Papers on the List: 11 Unfold All
30 Days PV: 1
Affiliated Colleges: