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Author:

Li, Zunchao (Li, Zunchao.) | Jiang, Yaolin (Jiang, Yaolin.) | Zhang, Lili (Zhang, Lili.)

Indexed by:

CPCI-S

Abstract:

A dual-material gate is applied to a single-halo SOI MOSFET in order to suppress short channel effects. Two-dimensional analytical models of surface potential and threshold voltage for the novel device are developed based on the explicit solution of the Poisson's equation. The characteristic improvement is investigated. It is concluded that the novel structure exhibits better suppression of hot carrier effect and threshold voltage roll-off, and higher carrier transport efficiency than a single-halo SOI MOSFET. The analytical models agree well with two-dimensional device simulator MEDICI.

Keyword:

SOI threshold voltage dual material gate analytical model halo

Author Community:

  • [ 1 ] [Li, Zunchao; Zhang, Lili] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Shaanxi Prov, Peoples R China
  • [ 2 ] [Jiang, Yaolin] Xi An Jiao Tong Univ, Sch Sci, Xian 710049, Peoples R China

Reprint Author's Address:

  • Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Shaanxi Prov, Peoples R China.

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Source :

2007 INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY

Year: 2007

Page: 66-+

Language: English

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 12

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