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A dual-material gate is applied to a single-halo SOI MOSFET in order to suppress short channel effects. Two-dimensional analytical models of surface potential and threshold voltage for the novel device are developed based on the explicit solution of the Poisson＇s equation. The characteristic improvement is investigated. It is concluded that the novel structure exhibits better suppression of hot carrier effect and threshold voltage roll-off, and higher carrier transport efficiency than a single-halo SOI MOSFET. The analytical models agree well with two-dimensional device simulator MEDICI.
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2007 INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY
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