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Abstract：
The temperature rise of high-voltage MOSFET in thin SOI (silicon on insulator) is found negligible with self-heating effects analyzed. The influence of the thickness of SOI within the range of 0.05 similar to 1 mum upon the devices＇ static characteristics is investigated with a 2-dimensional simulator. The optimised thickness of SOI is given concerning the threshold voltage, on-resistance and transconductance of the device.
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CHINESE JOURNAL OF ELECTRONICS
ISSN： 1022-4653
Year： 2000
Issue： 4
Volume： 9
Page： 380-383
1 . 0 1 4
JCR@2020
ESI Discipline： ENGINEERING;
JCR Journal Grade：4
CAS Journal Grade：4
Cited Count：
WoS CC Cited Count： 0
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 7
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