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Author:

Zheng, TL (Zheng, TL.) | Luo, JS (Luo, JS.)

Indexed by:

SCIE Scopus EI

Abstract:

The temperature rise of high-voltage MOSFET in thin SOI (silicon on insulator) is found negligible with self-heating effects analyzed. The influence of the thickness of SOI within the range of 0.05 similar to 1 mum upon the devices' static characteristics is investigated with a 2-dimensional simulator. The optimised thickness of SOI is given concerning the threshold voltage, on-resistance and transconductance of the device.

Keyword:

MOSFET SOI high-voltage thermal analysis device simulation thin-film

Author Community:

  • [ 1 ] Xian Jiao Tong Univ, Inst Microelect, Xian 710049, Peoples R China

Reprint Author's Address:

  • Xian Jiao Tong Univ, Inst Microelect, Xian 710049, Peoples R China.

Email:

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Source :

CHINESE JOURNAL OF ELECTRONICS

ISSN: 1022-4653

Year: 2000

Issue: 4

Volume: 9

Page: 380-383

0 . 9 4 5

JCR@2018

ESI Discipline: ENGINEERING;

JCR Journal Grade:4

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 14

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