In　order　to　suppress　drain-induced　barrier　lowering　in　dual　material　gate　SOI　MOSFETs,　halo　doping　is　used　in　the　channel　near　the　source.　Two-dimensional　analytical　models　of　surface　potential　and　threshold　voltage　for　the　novel　SOI　MOSFET　are　developed　based　on　the　explicit　solution　of　the　two-dimensional　Poisson＇s　equation.　Its　characteristic　improvement　is　investigated.　It　is　concluded　that　the　novel　structure　exhibits　better　suppression　of　drain-induced　barrier　lowering　and　higher　carrier　transport　efficiency　than　conventional　dual　material　gate　SOI　MOSFETs.　Its　drain-induced　barrier　lowering　decreases　with　increasing　halo　doping　concentration　but　does　not　change　monotonically　with　halo　length.　The　analytical　models　agree　well　with　the　two-dimensional　device　simulator　MEDICI.